IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems

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IGBT Module MMG80C120BF_Y1 1200V 80A 3-level T-NPC Configuration Copper-free Substrate for Energy Storage and Battery Systems

MACMIC Technologies 2006

China

Summary

The MMG80C120BF_Y1 IGBT module is a high-performance power electronics solution designed for energy storage and battery systems. Featuring a 1200V/80A rating with advanced M3i technology, this module utilizes a 3-level T-NPC configuration and copper-free substrate for enhanced thermal efficiency and reliability. Ideal for renewable energy and industrial applications, it delivers low saturation voltage (VCE sat: 1.90V) and excellent thermal resistance (RthJC: 0.54K/W), ensuring optimal performance in demanding environments.More

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Type	MMG80C120BF_Y1
V_CES (V)	1200
I_C (A)	80
Technology	M3i
Configruation	3-level T-NPC
Features	Copper-free Substrate
V_{CE (sat)} (V)	1.90
R_thJC (K/W)	0.54
Packages	GC

MACMIC Technologies

MACMIC Technologies

2006

China

IGBT, MOSFET, FRD, SiC chips, discrete devices, modules

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