LY-NM10EB-16B-L-F Passivated Edge Technology High Efficiency N-Type Wafer Solar Cell for Power Generation Systems

LY-NM10EB-16B-L-F Passivated Edge Technology High Efficiency N-Type Wafer Solar Cell for Power Generation Systems

  • LY-NM10EB-16B-L-F Passivated Edge Technology High Efficiency N-Type Wafer Solar Cell for Power Generation Systems
  • LY-NM10EB-16B-L-F Passivated Edge Technology High Efficiency N-Type Wafer Solar Cell for Power Generation Systems
Summary
LY-NM10EB-16B-L-F High-Efficiency N-Type Solar Cell with Passivated Edge Technology ensures superior power generation and reliability. Featuring bifaciality ≥80%, low-temperature coefficient (-0.30%/K), and advanced SMBB multi-busbar design, this solar cell delivers excellent performance in low irradiance environments. Ideal for high-efficiency photovoltaic systems, it naturally resists LID, PID, and LeTID for long-term stability in utility and residential solar applications.More
Specifications
Dimension:
182.2mmx91.88mm±0.25mm
Thickness:
130μm±13μm
Temperature coefficient:
?0.30%/K
  • LY-NM10EB-16B-L-F Passivated Edge Technology High Efficiency N-Type Wafer Solar Cell for Power Generation Systems
  • Passivated edge technology, higher efficiency
    • Bifaciality≥80%, higher power generation
      • Better performance in low irradiance environment
        • N-ype wafer, LID free naturally
          • Better anti-PID and anti-LeTID performance, better reliability
            • Temperature coefficient as low as 0.30%/K
              • SMBB multi busbar design, lower internal resistance loss
                Mechanical Characteristics
                Dimension182.2mmx91.88mm±0.25mm
                Thickness130μm±13μm
                Front side16busbar,86fingers,busbar width 0.020+0.015mm
                Rear side16busbar,90fingers,busbar width 0.018+0.015mm
                TkCurrent+0.045%/K
                TkVoltag?0.25%/K
                TkPower?0.30%/K
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