SL-G12N Monocrystalline Silicon Wafer High Purity Oxygen Low Concentration for Solar Power and Energy Storage Applications

SL-G12N Monocrystalline Silicon Wafer High Purity Oxygen Low Concentration for Solar Power and Energy Storage Applications

  • SL-G12N Monocrystalline Silicon Wafer High Purity Oxygen Low Concentration for Solar Power and Energy Storage Applications
  • SL-G12N Monocrystalline Silicon Wafer High Purity Oxygen Low Concentration for Solar Power and Energy Storage Applications
Summary
SL-G12N Monocrystalline Silicon Wafer offers high purity and low oxygen concentration (≤12 ppma), ideal for solar power and energy storage applications. With a resistivity of 0.4-1.6 Ω.cm and minority carrier lifetime ≥1000 μs, it ensures excellent electrical performance and reliability. Widely used in photovoltaics and renewable energy systems for superior efficiency.More
Specifications
Resistivity:
0.4-1.6 Ω.cm
Minority carrier lifetime:
≥1000 μs
Oxygen concentration:
≤12 ppma
  • SL-G12N Monocrystalline Silicon Wafer High Purity Oxygen Low Concentration for Solar Power and Energy Storage Applications
Resistivity/Ω.cm0.4-1.6
MCLT(Minority carrier lifetime)/μs≥1000
Oxygen concentration/ppma≤12
Carbon Concentration/ppma≤1
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